Home / Single FETs, MOSFETs / 2SK536-TB-E

2SK536-TB-E

Sanyo

Product No:

2SK536-TB-E

Manufacturer:

Sanyo

Package:

3-CP

Batch:

Datasheet:

Description:

N-CHANNEL ENHANCEMENT MOS SILICO

Quantity:

Delivery:

Payment:

In Stock : 3000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1411

$0.1995

$281.4945

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Product Information

Parameter Info

User Guide

Operating Temperature	125°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	15 pF @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20Ohm @ 10mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	-
Supplier Device Package	3-CP
Drain to Source Voltage (Vdss)	50 V
Power Dissipation (Max)	200mW (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Mfr	Sanyo
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk

Detail Info

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