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5HN02N

onsemi

Product No:

5HN02N

Manufacturer:

onsemi

Package:

3-NP

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Datasheet:

Description:

5HN02 - N-CHANNEL SILICON MOSFET

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Product Information

Parameter Info

User Guide

Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	22 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	1.86 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	2.3Ohm @ 100mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.4V @ 100µA
Supplier Device Package	3-NP
Drain to Source Voltage (Vdss)	50 V
Power Dissipation (Max)	400mW (Ta)
Series	-
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Mfr	onsemi
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Bulk