Home / Single FETs, MOSFETs / AIMW120R045M1XKSA1

AIMW120R045M1XKSA1

Infineon Technologies

Product No:

AIMW120R045M1XKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO247-3

Batch:

Datasheet:

Description:

SICFET N-CH 1200V 52A TO247-3

Quantity:

Delivery:

Payment:

In Stock : 242

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$23.484

$23.484
10

$20.87245

$208.7245
100

$18.255485

$1825.5485
500

$15.577986

$7788.993

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for AIMW120R045M1XKSA1, please feel free to contact us. To facilitate the processing of your inquiry, kindly include AIMW120R045M1XKSA1 and the required quantity in your RFQ. IICSEMI provides the latest quote for AIMW120R045M1XKSA1 without requiring registration. Latest information on AIMW120R045M1XKSA1: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs AIMW120R045M1XKSA1 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2130 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 15 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	59mOhm @ 20A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	5.7V @ 10mA
Supplier Device Package	PG-TO247-3
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	228W (Tc)
Series	Automotive, AEC-Q101, CoolSiC™
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Current - Continuous Drain (Id) @ 25°C	52A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	+20V, -7V
Package	Tube
Base Product Number	AIMW120