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APT9M100B

Microchip Technology

Product No:

APT9M100B

Manufacturer:

Microchip Technology

Package:

TO-247 [B]

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Datasheet:

Description:

MOSFET N-CH 1000V 9A TO247

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2605 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	80 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.4Ohm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 1mA
Supplier Device Package	TO-247 [B]
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	335W (Tc)
Series	POWER MOS 8™
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Mfr	Microchip Technology
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	APT9M100