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APTC80H29T1G

Microsemi Corporation

Product No:

APTC80H29T1G

Manufacturer:

Microsemi Corporation

Package:

SP1

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Datasheet:

Description:

MOSFET 4N-CH 800V 15A SP1

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	4 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	2254pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	290mOhm @ 7.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.9V @ 1mA
Supplier Device Package	SP1
Drain to Source Voltage (Vdss)	800V
Series	-
Package / Case	SP1
Technology	MOSFET (Metal Oxide)
Power - Max	156W
Current - Continuous Drain (Id) @ 25°C	15A
Mfr	Microsemi Corporation
Package	Bulk
Base Product Number	APTC80