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APTC90H12T1G

Microsemi Corporation

Product No:

APTC90H12T1G

Manufacturer:

Microsemi Corporation

Package:

SP1

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Datasheet:

Description:

MOSFET 4N-CH 900V 30A SP1

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	Super Junction
Configuration	4 N-Channel (Half Bridge)
Input Capacitance (Ciss) (Max) @ Vds	6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	120mOhm @ 26A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3.5V @ 3mA
Supplier Device Package	SP1
Drain to Source Voltage (Vdss)	900V
Series	CoolMOS™
Package / Case	SP1
Technology	MOSFET (Metal Oxide)
Power - Max	250W
Current - Continuous Drain (Id) @ 25°C	30A
Mfr	Microsemi Corporation
Package	Tray
Base Product Number	APTC90