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APTM100DDA35T3G

Microsemi Corporation

Product No:

APTM100DDA35T3G

Manufacturer:

Microsemi Corporation

Package:

SP3

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Datasheet:

Description:

MOSFET 2N-CH 1000V 22A SP3

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	5200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs	186nC @ 10V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	420mOhm @ 11A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 2.5mA
Supplier Device Package	SP3
Drain to Source Voltage (Vdss)	1000V (1kV)
Series	-
Package / Case	SP3
Technology	MOSFET (Metal Oxide)
Power - Max	390W
Current - Continuous Drain (Id) @ 25°C	22A
Mfr	Microsemi Corporation
Package	Bulk
Base Product Number	APTM100