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AUIRFS6535

Infineon Technologies

Product No:

AUIRFS6535

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

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Datasheet:

Description:

MOSFET N-CH 300V 19A D2PAK

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	57 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	185mOhm @ 11A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 150µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	300 V
Power Dissipation (Max)	210W (Tc)
Series	HEXFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	AUIRFS6535