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AUIRFS8409

Infineon Technologies

Product No:

AUIRFS8409

Manufacturer:

Infineon Technologies

Package:

PG-TO263-3

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Datasheet:

Description:

AUIRFS8409 - 20V-40V N-CHANNEL A

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	14240 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	450 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.2mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.9V @ 250µA
Supplier Device Package	PG-TO263-3
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	375W (Tc)
Series	HEXFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	195A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk