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BAS316,H3F

Toshiba Semiconductor and Storage

Product No:

BAS316,H3F

Manufacturer:

Toshiba Semiconductor and Storage

Package:

USC

Batch:

Datasheet:

Description:

DIODE GEN PURP 100V 250MA USC

Quantity:

Delivery:

Payment:

In Stock : 1053

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$0.1615

$0.1615
10

$0.1178

$1.178
100

$0.063365

$6.3365
500

$0.049742

$24.871
1000

$0.034542

$34.542

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Product Information

Parameter Info

User Guide

Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	3 ns
Capacitance @ Vr, F	0.35pF @ 0V, 1MHz
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	USC
Current - Reverse Leakage @ Vr	200 nA @ 80 V
Series	-
Package / Case	SC-76, SOD-323
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.25 V @ 150 mA
Mfr	Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max)	100 V
Package	Tape & Reel (TR)
Current - Average Rectified (Io)	250mA
Operating Temperature - Junction	150°C (Max)
Base Product Number	BAS316