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BAS516,H3F

Toshiba Semiconductor and Storage

Product No:

BAS516,H3F

Package:

ESC

Batch:

-

Datasheet:

-

Description:

DIODE GEN PURP 100V 250MA ESC

Quantity:

Delivery:

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Payment:

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In Stock : 1109

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.1615

    $0.1615

  • 10

    $0.1178

    $1.178

  • 100

    $0.063365

    $6.3365

  • 500

    $0.049742

    $24.871

  • 1000

    $0.034542

    $34.542

  • 2000

    $0.028614

    $57.228

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Product Information

Parameter Info

User Guide

Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 3 ns
Capacitance @ Vr, F 0.35pF @ 0V, 1MHz
Mounting Type Surface Mount
Product Status Active
Supplier Device Package ESC
Current - Reverse Leakage @ Vr 200 nA @ 80 V
Series -
Package / Case SC-79, SOD-523
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA
Mfr Toshiba Semiconductor and Storage
Voltage - DC Reverse (Vr) (Max) 100 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 250mA
Operating Temperature - Junction 150°C (Max)
Base Product Number BAS516

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