Home / Single, Pre-Biased Bipolar Transistors / BCR135TE6327

BCR135TE6327

Infineon Technologies

Product No:

BCR135TE6327

Manufacturer:

Infineon Technologies

Package:

PG-SOT23-3-11

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Datasheet:

Description:

BIPOLAR DIGITAL TRANSISTOR

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Product Information

Parameter Info

User Guide

Frequency - Transition	150 MHz
Current - Collector (Ic) (Max)	100 mA
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Resistor - Base (R1)	10 kOhms
Mounting Type	Surface Mount
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	50 V
Supplier Device Package	PG-SOT23-3-11
Series	-
Transistor Type	NPN - Pre-Biased
Package / Case	TO-236-3, SC-59, SOT-23-3
Power - Max	200 mW
Resistor - Emitter Base (R2)	47 kOhms
Mfr	Infineon Technologies
Current - Collector Cutoff (Max)	100nA (ICBO)
Package	Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 5mA, 5V
Base Product Number	BCR135