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BSB008NE2LXXUMA1

Infineon Technologies

Product No:

BSB008NE2LXXUMA1

Manufacturer:

Infineon Technologies

Package:

MG-WDSON-2, CanPAK M™

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Description:

MOSFET N-CH 25V 46A/180A 2WDSON

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	16000 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs	343 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.8mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	MG-WDSON-2, CanPAK M™
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Series	OptiMOS™
Package / Case	3-WDSON
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	46A (Ta), 180A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSB008