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BSB012N03LX3G

Infineon Technologies

Product No:

BSB012N03LX3G

Manufacturer:

Infineon Technologies

Package:

MG-WDSON-2, CanPAK M™

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : 5508

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

277

$1.026

$284.202

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Product Information

Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	16900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	169 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.2mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	MG-WDSON-2, CanPAK M™
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Series	OptiMOS™
Package / Case	3-WDSON
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	39A (Ta), 180A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk