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BSB015N04NX3GXUMA1

Infineon Technologies

Product No:

BSB015N04NX3GXUMA1

Manufacturer:

Infineon Technologies

Package:

MG-WDSON-2, CanPAK M™

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Datasheet:

Description:

MOSFET N-CH 40V 36A/180A 2WDSON

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Parameter Info

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	142 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.5mOhm @ 30A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	MG-WDSON-2, CanPAK M™
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	2.8W (Ta), 89W (Tc)
Series	OptiMOS™
Package / Case	3-WDSON
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	36A (Ta), 180A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)