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BSB165N15NZ3GXUMA1

Infineon Technologies

Product No:

BSB165N15NZ3GXUMA1

Manufacturer:

Infineon Technologies

Package:

MG-WDSON-2, CanPAK M™

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Description:

MOSFET N-CH 150V 9A/45A 2WDSON

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Parameter Info

User Guide

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2800 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	16.5mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 110µA
Supplier Device Package	MG-WDSON-2, CanPAK M™
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	2.8W (Ta), 78W (Tc)
Series	OptiMOS™
Package / Case	3-WDSON
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 45A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSB165