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BSC004NE2LS5ATMA1

Infineon Technologies

Product No:

BSC004NE2LS5ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8

Batch:

-

Datasheet:

-

Description:

TRENCH <= 40V

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 11000 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs 238 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.45mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 10mA
Supplier Device Package PG-TDSON-8
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 2.5W (Ta), 188W (Tc)
Series OptiMOS™
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 479A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)

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