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BSC019N04NSG

Infineon Technologies

Product No:

BSC019N04NSG

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-1

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Datasheet:

Description:

BSC019N04 - 12V-300V N-CHANNEL P

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	8800 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	108 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.9mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 85µA
Supplier Device Package	PG-TDSON-8-1
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	2.5W (Ta), 125W (Tc)
Series	OptiMOS™ 3
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 204A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk