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BSC0501NSIATMA1

Infineon Technologies

Product No:

BSC0501NSIATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-6

Batch:

Datasheet:

Description:

MOSFET N-CH 30V 29A/100A TDSON

Quantity:

Delivery:

Payment:

In Stock : 23534

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.425

$1.425
10

$1.2768

$12.768
100

$1.026

$102.6
500

$0.842916

$421.458
1000

$0.698421

$698.421
2000

$0.650256

$1300.512

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2200 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.9mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	PG-TDSON-8-6
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	29A (Ta), 100A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	BSC0501