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BSC205N10LSG

Infineon Technologies

Product No:

BSC205N10LSG

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-1

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Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2900 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20.5mOhm @ 45A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 43µA
Supplier Device Package	PG-TDSON-8-1
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	76W (Tc)
Series	OptiMOS™
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	7.4A (Ta), 45A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk