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BSD816SNH6327

Infineon Technologies

Product No:

BSD816SNH6327

Manufacturer:

Infineon Technologies

Package:

PG-SOT363-6

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Description:

MOSFET N-CH 20V 1.4A SOT363-6

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	0.6 nC @ 2.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	160mOhm @ 1.4A, 2.5V
Product Status	Active
Vgs(th) (Max) @ Id	950mV @ 3.7µA
Supplier Device Package	PG-SOT363-6
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	-
Package / Case	6-VSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.4A (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±8V
Package	Bulk