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BSP100,135

NXP USA Inc.

Product No:

BSP100,135

Manufacturer:

NXP USA Inc.

Package:

SOT-223

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Datasheet:

Description:

MOSFET N-CH 30V 3.2A SOT223

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Product Information

Parameter Info

User Guide

Operating Temperature	-65°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	6 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	100mOhm @ 2.2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.8V @ 1mA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	8.3W (Tc)
Series	TrenchMOS™
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.2A (Ta)
Mfr	NXP USA Inc.
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk