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BSP125H6327XTSA1

Infineon Technologies

Product No:

BSP125H6327XTSA1

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-4

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 120MA SOT223-4

Quantity:

Delivery:

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In Stock : 32931

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.8645

    $0.8645

  • 10

    $0.75715

    $7.5715

  • 100

    $0.58064

    $58.064

  • 500

    $0.459021

    $229.5105

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 6.6 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 45Ohm @ 120mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 94µA
Supplier Device Package PG-SOT223-4
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 1.8W (Ta)
Series SIPMOS®
Package / Case TO-261-4, TO-261AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120mA (Ta)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number BSP125

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