Home / Single FETs, MOSFETs / BSP149 E6327

BSP149 E6327

Infineon Technologies

Product No:

BSP149 E6327

Manufacturer:

Infineon Technologies

Package:

PG-SOT223-4

Batch:

Datasheet:

Description:

MOSFET N-CH 200V 660MA SOT223-4

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for BSP149 E6327, please feel free to contact us. To facilitate the processing of your inquiry, kindly include BSP149 E6327 and the required quantity in your RFQ. IICSEMI provides the latest quote for BSP149 E6327 without requiring registration. Latest information on BSP149 E6327: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs BSP149 E6327 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	430 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.8Ohm @ 660mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 400µA
Supplier Device Package	PG-SOT223-4
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	1.8W (Ta)
Series	SIPMOS®
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	660mA (Ta)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	0V, 10V
Package	Tape & Reel (TR)