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BSZ105N04NSG

Infineon Technologies

Product No:

BSZ105N04NSG

Manufacturer:

Infineon Technologies

Package:

PG-TSDSON-8

Batch:

-

Datasheet:

-

Description:

OPTLMOS POWER-MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 14µA
Supplier Device Package PG-TSDSON-8
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 2.1W (Ta), 35W (Tc)
Series OptiMOS™3
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 40A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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