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BTS115AE6327

Infineon Technologies

Product No:

BTS115AE6327

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 735 pF @ 25 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 120mOhm @ 7.8A, 4.5V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package PG-TO220-3-1
Drain to Source Voltage (Vdss) 50 V
Power Dissipation (Max) 50W
Series TEMPFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15.5A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±10V
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Package Bulk

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