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BTS282ZE3180ANTMA1

Infineon Technologies

Product No:

BTS282ZE3180ANTMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-1

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	232 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	6.5mOhm @ 36A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 240µA
Supplier Device Package	PG-TO263-7-1
Drain to Source Voltage (Vdss)	49 V
Power Dissipation (Max)	300W (Tc)
Series	TEMPFET®
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk