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BUK625R0-40C,118-NXP

NXP USA Inc.

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NXP USA Inc.

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DPAK

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Description:

MOSFET N-CH 40V 90A DPAK

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.8V @ 1mA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	158W (Ta)
Series	Automotive, AEC-Q101, TrenchMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	90A (Ta)
Mfr	NXP USA Inc.
Vgs (Max)	±16V
Package	Bulk