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BUK7Y59-60EX

NXP Semiconductors

Product No:

BUK7Y59-60EX

Manufacturer:

NXP Semiconductors

Package:

LFPAK56, Power-SO8

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Datasheet:

Description:

NEXPERIA BUK7Y59 - N-CHANNEL MOS

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	494 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	7.8 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	59mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	LFPAK56, Power-SO8
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	37W (Tc)
Series	TrenchMOS™
Package / Case	SC-100, SOT-669
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	17A (Tc)
Mfr	NXP Semiconductors
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk