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BUZ101SL

Infineon Technologies

Product No:

BUZ101SL

Manufacturer:

Infineon Technologies

Package:

PG-TO220-3-1

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Datasheet:

Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	40mOhm @ 14A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 40µA
Supplier Device Package	PG-TO220-3-1
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	55W (Tc)
Series	SIPMOS®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±14V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk