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BYM12-100HE3_A/I

Vishay General Semiconductor - Diodes Division

Product No:

BYM12-100HE3_A/I

Package:

DO-213AB

Batch:

-

Datasheet:

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Description:

DIODE GEN PURP 100V 1A DO213AB

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Capacitance @ Vr, F 20pF @ 4V, 1MHz
Mounting Type Surface Mount
Product Status Active
Supplier Device Package DO-213AB
Current - Reverse Leakage @ Vr 5 µA @ 100 V
Series Automotive, AEC-Q101, Superectifier®
Package / Case DO-213AB, MELF (Glass)
Technology Standard
Voltage - Forward (Vf) (Max) @ If 1 V @ 1 A
Mfr Vishay General Semiconductor - Diodes Division
Voltage - DC Reverse (Vr) (Max) 100 V
Package Tape & Reel (TR)
Current - Average Rectified (Io) 1A
Operating Temperature - Junction -65°C ~ 175°C
Base Product Number BYM12

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