Home / FET, MOSFET Arrays / CSD85312Q3E

CSD85312Q3E

Texas Instruments

Product No:

CSD85312Q3E

Manufacturer:

Texas Instruments

Package:

8-VSON (3.3x3.3)

Batch:

Datasheet:

Description:

MOSFET 2N-CH 20V 39A 8VSON

Quantity:

Delivery:

Payment:

In Stock : 10951

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$1.1685

$1.1685
10

$1.0469

$10.469
100

$0.816525

$81.6525
500

$0.674538

$337.269
1000

$0.532522

$532.522

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for CSD85312Q3E, please feel free to contact us. To facilitate the processing of your inquiry, kindly include CSD85312Q3E and the required quantity in your RFQ. IICSEMI provides the latest quote for CSD85312Q3E without requiring registration. Latest information on CSD85312Q3E: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs CSD85312Q3E latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Logic Level Gate, 5V Drive
Configuration	2 N-Channel (Dual) Common Source
Input Capacitance (Ciss) (Max) @ Vds	2390pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	15.2nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12.4mOhm @ 10A, 8V
Product Status	Active
Vgs(th) (Max) @ Id	1.4V @ 250µA
Supplier Device Package	8-VSON (3.3x3.3)
Drain to Source Voltage (Vdss)	20V
Series	NexFET™
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2.5W
Current - Continuous Drain (Id) @ 25°C	39A
Mfr	Texas Instruments
Package	Tape & Reel (TR)
Base Product Number	CSD85312