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DMG4N65CT

Diodes Incorporated

Product No:

DMG4N65CT

Manufacturer:

Diodes Incorporated

Package:

TO-220-3

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Datasheet:

Description:

MOSFET N CH 650V 4A TO220-3

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	13.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3Ohm @ 2A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	2.19W (Ta)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Mfr	Diodes Incorporated
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	DMG4