Home / Single FETs, MOSFETs / DMWSH120H90SM4Q

DMWSH120H90SM4Q

Diodes Incorporated

Product No:

DMWSH120H90SM4Q

Manufacturer:

Diodes Incorporated

Package:

TO-247-4

Batch:

Datasheet:

Description:

SIC MOSFET BVDSS: >1000V TO247-4

Quantity:

Delivery:

Payment:

In Stock : 19

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

1

$18.696

$18.696
10

$16.473

$164.73
100

$14.246675

$1424.6675
500

$12.911032

$6455.516

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for DMWSH120H90SM4Q, please feel free to contact us. To facilitate the processing of your inquiry, kindly include DMWSH120H90SM4Q and the required quantity in your RFQ. IICSEMI provides the latest quote for DMWSH120H90SM4Q without requiring registration. Latest information on DMWSH120H90SM4Q: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs DMWSH120H90SM4Q latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1112 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	47.6 nC @ 15 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	97.5mOhm @ 20A, 15V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 5mA
Supplier Device Package	TO-247-4
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	235W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Mfr	Diodes Incorporated
Vgs (Max)	+19V, -8V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube