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FDA16N50-F109

onsemi

Product No:

FDA16N50-F109

Manufacturer:

onsemi

Package:

TO-3PN

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 500V 16.5A TO3PN

Quantity:

Delivery:

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Payment:

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In Stock : 329

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.8785

    $2.8785

  • 10

    $2.58115

    $25.8115

  • 100

    $2.114795

    $211.4795

  • 500

    $1.800307

    $900.1535

  • 1000

    $1.518328

    $1518.328

  • 2000

    $1.442414

    $2884.828

  • 5000

    $1.388188

    $6940.94

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FDA16N50-F109, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FDA16N50-F109 and the required quantity in your RFQ. IICSEMI provides the latest quote for FDA16N50-F109 without requiring registration. Latest information on FDA16N50-F109: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FDA16N50-F109 latest information:#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1945 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 380mOhm @ 8.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-3PN
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 205W (Tc)
Series UniFET™
Package / Case TO-3P-3, SC-65-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16.5A (Tc)
Mfr onsemi
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number FDA16N50

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