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FDC5614P-G

onsemi

Product No:

FDC5614P-G

Manufacturer:

onsemi

Package:

SuperSOT™-6

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V SUPERSOT6

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 759 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 105mOhm @ 3A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package SuperSOT™-6
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 800mW (Ta)
Series PowerTrench®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Mfr onsemi
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number FDC5614

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