Home / Single FETs, MOSFETs / FDI045N10A-F102

FDI045N10A-F102

Fairchild Semiconductor

Product No:

FDI045N10A-F102

Manufacturer:

Fairchild Semiconductor

Package:

I2PAK (TO-262)

Batch:

Datasheet:

Description:

N-CHANNEL POWERTRENCH MOSFET 100

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FDI045N10A-F102, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FDI045N10A-F102 and the required quantity in your RFQ. IICSEMI provides the latest quote for FDI045N10A-F102 without requiring registration. Latest information on FDI045N10A-F102: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FDI045N10A-F102 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5270 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	74 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.5mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	I2PAK (TO-262)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	263W (Tc)
Series	PowerTrench®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk