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FDMS4435BZ

Fairchild Semiconductor

Product No:

FDMS4435BZ

Package:

8-PQFN (5x6)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 9

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 1500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 532

    $0.532

    $283.024

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package 8-PQFN (5x6)
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 2.5W (Ta), 39W (Tc)
Series PowerTrench®
Package / Case 8-PowerTDFN
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 18A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk

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