Home / Single FETs, MOSFETs / FDP120N10

FDP120N10

Fairchild Semiconductor

Product No:

FDP120N10

Manufacturer:

Fairchild Semiconductor

Package:

TO-220-3

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 7

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FDP120N10, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FDP120N10 and the required quantity in your RFQ. IICSEMI provides the latest quote for FDP120N10 without requiring registration. Latest information on FDP120N10: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FDP120N10 latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	5605 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	12mOhm @ 74A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	TO-220-3
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	170W (Tc)
Series	PowerTrench®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	74A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk