Home / Single IGBTs / FGL35N120FTDTU

FGL35N120FTDTU

Fairchild Semiconductor

Product No:

FGL35N120FTDTU

Manufacturer:

Fairchild Semiconductor

Package:

HPM F2

Batch:

Datasheet:

Description:

INSULATED GATE BIPOLAR TRANSISTO

Quantity:

Delivery:

Payment:

In Stock : 15610

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

50

$5.757

$287.85

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Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
Input Type	Standard
Test Condition	600V, 35A, 10Ohm, 15V
Reverse Recovery Time (trr)	337 ns
Switching Energy	2.5mJ (on), 1.7mJ (off)
Current - Collector (Ic) (Max)	70 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	1200 V
Td (on/off) @ 25°C	34ns/172ns
Supplier Device Package	HPM F2
Current - Collector Pulsed (Icm)	105 A
Series	-
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 35A
Package / Case	TO-264-3, TO-264AA
Gate Charge	210 nC
Power - Max	368 W
Mfr	Fairchild Semiconductor
Package	Bulk
IGBT Type	Trench Field Stop