Home / Single FETs, MOSFETs / FQB19N20CTM

FQB19N20CTM

Fairchild Semiconductor

Product No:

FQB19N20CTM

Manufacturer:

Fairchild Semiconductor

Package:

D2PAK (TO-263)

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQB19N20CTM, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQB19N20CTM and the required quantity in your RFQ. IICSEMI provides the latest quote for FQB19N20CTM without requiring registration. Latest information on FQB19N20CTM: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQB19N20CTM latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	53 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	170mOhm @ 9.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	D2PAK (TO-263)
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	3.13W (Ta), 139W (Tc)
Series	QFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk