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FQB19N20LTM

Fairchild Semiconductor

Product No:

FQB19N20LTM

Package:

D2PAK (TO-263)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 2

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 140mOhm @ 10.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package D2PAK (TO-263)
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 3.13W (Ta), 140W (Tc)
Series QFET®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Bulk

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