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FQB4N80TM

Fairchild Semiconductor

Product No:

FQB4N80TM

Manufacturer:

Fairchild Semiconductor

Package:

D2PAK (TO-263)

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Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 3

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Product Information

Parameter Info

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.6Ohm @ 1.95A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	D2PAK (TO-263)
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	3.13W (Ta), 130W (Tc)
Series	QFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	3.9A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk