Home / Single FETs, MOSFETs / FQB85N06TM

FQB85N06TM

Fairchild Semiconductor

Product No:

FQB85N06TM

Manufacturer:

Fairchild Semiconductor

Package:

D2PAK (TO-263)

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQB85N06TM, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQB85N06TM and the required quantity in your RFQ. IICSEMI provides the latest quote for FQB85N06TM without requiring registration. Latest information on FQB85N06TM: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQB85N06TM latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4120 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	112 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10mOhm @ 42.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	D2PAK (TO-263)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	3.75W (Ta), 160W (Tc)
Series	QFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	85A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±25V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk