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FQD2N100TM

Fairchild Semiconductor

Product No:

FQD2N100TM

Package:

TO-252AA

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 520 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 15.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9Ohm @ 800mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 1000 V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Series QFET®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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