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FQD5N15TM

Fairchild Semiconductor

Product No:

FQD5N15TM

Package:

TO-252, (D-Pak)

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 4

Quantity:

Delivery:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 230 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 800mOhm @ 2.15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-252, (D-Pak)
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Series QFET®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk

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