Home / Single FETs, MOSFETs / FQD5N60CTM

FQD5N60CTM

Fairchild Semiconductor

Product No:

FQD5N60CTM

Manufacturer:

Fairchild Semiconductor

Package:

TO-252, (D-Pak)

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 2

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Country

Quantity

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQD5N60CTM, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQD5N60CTM and the required quantity in your RFQ. IICSEMI provides the latest quote for FQD5N60CTM without requiring registration. Latest information on FQD5N60CTM: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQD5N60CTM latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.5Ohm @ 1.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-252, (D-Pak)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	2.5W (Ta), 49W (Tc)
Series	QFET®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.8A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk