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FQE10N20CTU

Fairchild Semiconductor

Product No:

FQE10N20CTU

Package:

TO-126-3

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 200V 4A TO126-3

Quantity:

Delivery:

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In Stock : 21919

Minimum: 1 Multiples: 1

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Unit Price

Ext Price

  • 1158

    $0.247

    $286.026

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 360mOhm @ 2A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-126-3
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 12.8W (Tc)
Series QFET®
Package / Case TO-225AA, TO-126-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Mfr Fairchild Semiconductor
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube

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