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FQH8N100C

onsemi

Product No:

FQH8N100C

Manufacturer:

onsemi

Package:

TO-247-3

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Datasheet:

Description:

MOSFET N-CH 1000V 8A TO247-3

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IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQH8N100C, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQH8N100C and the required quantity in your RFQ. IICSEMI provides the latest quote for FQH8N100C without requiring registration. Latest information on FQH8N100C: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQH8N100C latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.45Ohm @ 4A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-247-3
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	225W (Tc)
Series	QFET®
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Mfr	onsemi
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FQH8N100