Home / Single FETs, MOSFETs / FQI27N25TU

FQI27N25TU

Fairchild Semiconductor

Product No:

FQI27N25TU

Manufacturer:

Fairchild Semiconductor

Package:

I2PAK (TO-262)

Batch:

Datasheet:

Description:

MOSFET N-CH 250V 25.5A I2PAK

Quantity:

Delivery:

Payment:

In Stock : 600

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

189

$1.5105

$285.4845

Not the price you want? Send RFQ Now and we'll contact you ASAP.

IICSEMI, as a globally renowned distributor of electronic components,sells a wide range of electronic parts from the world's top brands, ensuring all products undergo strict quality control and meet the highest standards. If you are interested in learning about the detailed specifications,configurations, pricing, lead times, and payment terms for FQI27N25TU, please feel free to contact us. To facilitate the processing of your inquiry, kindly include FQI27N25TU and the required quantity in your RFQ. IICSEMI provides the latest quote for FQI27N25TU without requiring registration. Latest information on FQI27N25TU: #Specifications #FAQ #Datasheet #Labels #Related Products #Associated Blogs FQI27N25TU latest information：#Specification#FAQ#Datasheet#Tags#Recommended Parts#Related Blog

Product Information

Parameter Info

User Guide

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	110mOhm @ 12.75A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	I2PAK (TO-262)
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	3.13W (Ta), 180W (Tc)
Series	QFET®
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	25.5A (Tc)
Mfr	Fairchild Semiconductor
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk